? 2003 ixys all rights reserved 1 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 50-06p1 vii 50-06p1 vid 50-06p1 vio 50-06p1 303 b3 i c25 = 42.5 a v ces = 600 v v ce(sat) typ. = 2.4 v igbts symbol conditions maximum ratings v ces t vj = 25c to 150c 600 v v ges 20 v i c25 t c = 25c 42.5 a i c80 t c = 80c 29 a i cm v ge = 15 v; r g = 33 ? ; t vj = 125c 60 a v cek rbsoa, clamped inductive load; l = 100 h v ces t sc v ce = v ces ; v ge = 15 v; r g = 33 ? ; t vj = 125c 10 s (scsoa) non-repetitive p tot t c = 25c 130 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. v ce(sat) i c = 50 a; v ge = 15 v; t vj = 25c 2.4 2.9 v t vj = 125c 2.9 v v ge(th) i c = 0.7 ma; v ge = v ce 4.5 6.5 v i ces v ce = v ces ;v ge = 0 v; t vj = 25c 0.6 ma t vj = 125c 1.7 ma i ges v ce = 0 v; v ge = 20 v 100 na t d(on) 50 ns t r 50 ns t d(off) 270 ns t f 40 ns e on 1.4 mj e off 1.0 mj c ies v ce = 25 v; v ge = 0 v; f = 1 mhz 16 nf r thjc (per igbt) 0.96 k/w r thjh with heatsink compound (0.42 k/m.k; 50 m) 1.92 k/w inductive load, t vj = 125c v ce = 300 v; i c = 30 a v ge = 15/0 v; r g = 33 ? igbt modules in eco-pac 2 short circuit soa capability square rbsoa vdi x15 x16 ntc ac1 ps18 ik10 l9 t16 preliminary data sheet pin arangement see outlines vii op9 gh10 vx18 l9 e2 k10 x16 x13 x15 ntc features npt igbt's - positive temperature coefficient of saturation voltage - fast switching fred diodes - fast reverse recovery - low forward voltage industry standard package - solderable pins for pcb mounting - isolated dcb ceramic base plate advantages space and weight savings reduced protection circuits leads with expansion bend for stress relief typical applications ac and dc motor control ac servo and robot drives power supplies welding inverters vid ik10 sv18 ac1 l9 f1 x15 x16 ntc vio jk ln a s
? 2003 ixys all rights reserved 2 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 50-06p1 vii 50-06p1 vid 50-06p1 vio 50-06p1 303 b3 reverse diodes (fred) symbol conditions maximum ratings i f25 t c = 25c 30 a i f80 t c = 80c 19 a symbol conditions characteristic values min. typ. max. v f i f = 30 a; t vj = 25c 2.57 2.84 v t vj = 125c 1.8 v i rm i f = 15 a; di f /dt = 400 a/s; t vj = 125c 7 a t rr v r = 300 v; v ge = 0 v 50 ns r thjc 2.3 k/w r thjh with heatsink compound (0.42 k/m.k; 50 m) 4.6 k/w module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+150 c v isol i isol 1 ma; 50/60 hz 3000 v~ m d mounting torque (m4) 1.5 - 2.0 nm 14 - 18 lb.in. a max. allowable acceleration 50 m/s 2 symbol conditions characteristic values min. typ. max. d s creepage distance on surface (pin to heatsink) 11.2 mm d a strike distance in air (pin to heatsink) 11.2 mm weight 24 g temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.75 5.0 5.25 k ? b 25/50 3375 k vid data according to iec 60747 and refer to a single transistor or diode unless otherwise stated. vii vdi vio
? 2003 ixys all rights reserved 3 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 50-06p1 vii 50-06p1 vid 50-06p1 vio 50-06p1 303 b3 fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode 0 200 400 600 800 1000 0 10 20 30 40 50 0 30 60 90 120 150 0123456 0 15 30 45 60 75 90 0 40 80 120 160 0 5 10 15 20 0123456 0 15 30 45 60 75 90 v ce v i c v ce a i c v nc q g -di/dt v v ge i rm t rr a/ s mubw3006a7 i rm t rr 9v 11v a 9v 11v v ge = 17v 15v 13v a 4 6 8 10121416 0 15 30 45 60 75 90 v v ge a i c t j = 25c t j = 125c 0,0 0,5 1,0 1,5 2,0 0 15 30 45 60 75 90 v v f i f t j = 25c t j = 125c a ns 25t60 25t60 25t60 25t60 25t60 t j = 25c t j = 125c v ge = 17 v 15 v 13 v t j = 125c v r = 300 v i f = 30 a v ce = 20v v ce = 300 v i c = 30 a
? 2003 ixys all rights reserved 4 - 4 ixys reserves the right to change limits, test conditions and dimensions. vdi 50-06p1 vii 50-06p1 vid 50-06p1 vio 50-06p1 303 b3 fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and switching fig. 10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa 0204060 0 2 4 6 8 0 20 40 60 80 0 204060 0,0 0,5 1,0 1,5 2,0 0 100 200 300 400 0,00001 0,0001 0,001 0,01 0,1 1 10 0,0001 0,001 0,01 0,1 1 10 0 1020304050607080 0,0 0,5 1,0 1,5 2,0 0 100 200 300 400 0 1020304050607080 0 1 2 3 4 20 40 60 80 single pulse v ce = 300v v ge = 15v r g = 33 ? t vj = 125c vdi...50-06p1 v ce = 300v v ge = 15v i c = 30a t vj = 125c 0 100 200 300 400 500 600 700 0 20 40 60 80 r g = 33 ? t vj = 125c v ce = 300v v ge = 15v r g = 33 ? t vj = 125c e on t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g ? r g ? v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt v a mj ns ns mj 25t60 25t60 25t60 25t60 25t60 v ce = 300 v v ge = 15 v i c = 30 a t vj = 125c diode
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